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1.5V Drive Nch+SBD MOSFET
ES6U2
Structure Silicon N-channel MOSFET / Schottky barrier diode Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode. Dimensions (Unit : mm)
WEMT6
(6)
(5)
(4)
(1)
(2)
(3)
Abbriviated symbol : U02
Applications Switching
Inner circuit
(6) (5) (4)
Package specifications
Package Type ES6U2
(1)
1 ESD protection diode 2 Body diode
Taping T2R 8000
1 (2) (3)
(1)Gate (2)Source (3)Anode (4)Cathode (5)Drain (6)Drain
Code Basic ordering unit (pieces)
2
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Power dissipation
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board
Continuous Pulsed Continuous Pulsed
Symbol VDSS VGSS ID IDP 1 IS ISP 1 Tch PD
2
Limits 20 10 1.5 3.0 0.5 3.0 150 0.7
Unit V V A A A A C W / ELEMENT
Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Power dissipation
1 60Hz 1cyc. 2 Mounted on ceramic board
Symbol VRM VR IF IFSM Tj PD
1
Limits 25 20 0.5 2.0 150 0.5
Unit V V A A C W / ELEMENT
2
Parameter Power dissipation Range of storage temperature
Mounted on a ceramic board
Symbol PD Tstg
Limits 0.8 -55 to +150
Unit W / TOTAL C
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1/5
2009.12 - Rev.A
ES6U2
Electrical characteristics (Ta=25C)
Parameter Symbol Min. - 20 - 0.3 - - - - 1.6 - - - - - - - - - - Typ. - - - - 130 170 220 300 - 110 18 15 5 5 20 3 1.8 0.3 0.3 Max. 10 - 1 1.0 180 240 310 600 - - - - - - - - - - - Unit A V A V m m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=10V, VDS=0V ID= 1mA, VGS=0V VDS= 20V, VGS=0V VDS= 10V, ID= 1mA ID= 1.5A, VGS= 4.5V ID= 1.5A, VGS= 2.5V ID= 0.8A, VGS= 1.8V ID= 0.3A, VGS= 1.5V VDS= 10V, ID= 1.5A VDS= 10V VGS=0V f=1MHz
Data Sheet
IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd

VDD 10V ID= 1A VGS= 4.5V RL 10 RG= 10 VDD 10V, VGS= 4.5V ID= 1.5A, RL 6.7 RG= 10
Parameter Symbol Min. Forward voltage
Pulsed
Typ. -
Max. 1.2
VSD
-
Unit V
Conditions IS= 1.5A, VGS=0V
Parameter Forward voltage Reverse current Symbol VF IR Min. - - - Typ. - - - Max. 0.36 0.52 100 Unit V V A IF= 0.1A IF= 0.5A VR= 20V Conditions
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2/5
2009.12 - Rev.A
ES6U2
Electrical characteristics curves
1.5 DRAIN CURRENT : ID [A] VGS= 10V VGS= 4.5V VGS= 2.5V Ta=25C Pulsed DRAIN CURRENT : ID [A] 1.5 VGS= 4.5V VGS= 1.8V VGS= 1.5V 1 Ta=25C Pulsed DRAIN CURRENT : ID [A] 10 VDS= 10V Pulsed Ta= 125C Ta= 75C Ta= 25C Ta= - 25C
Data Sheet
1
1 VGS= 1.8V VGS= 1.5V
0.1
0.5
VGS= 1.3V
0.5 VGS= 1.1V 0
VGS= 1.3V
0.01
VGS= 1.2V 0 0 0.2 0.4 0.6 0.8 1
0.001 0 2 4 6 8 10 0 0.5 1 1.5 2
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics()
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics()
GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics
10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
Ta= 25C Pulsed
10000 VGS= 1.5V VGS= 1.8V VGS= 2.5V VGS= 4.5V
VGS= 4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C
10000
VGS= 2.5V Pulsed
1000
1000
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
100
100
100
10 0.01
0.1
1
10
10 0.01
0.1
1
10
10 0.01
0.1
1
10
DRAIN-CURRENT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current()
10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on)[m]
VGS= 1.8V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C
10000
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
VGS= 1.5V Pulsed
10
1000
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
VDS= 10V Pulsed
1 Ta= -25C Ta=25C Ta=75C Ta=125C
100
100
10 0.01
0.1
1
10
10 0.01
0.1
1
10
0.1 0.01
0.1
1
10
DRAIN-CURRENT : ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current()
DRAIN-CURRENT : ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current
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3/5
2009.12 - Rev.A
ES6U2
10 REVERSE DRAIN CURRENT : Is [A] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[m] VGS=0V Pulsed 600 500 ID = 0.8A 400 ID = 1.5A 300 200 100 tr 0 0 0.5 1 1.5 0 2 4 6 8 10 1 0.01 0.1 1 10 Ta=25C Pulsed SWITCHING TIME : t [ns] 1000 Ta=25C VDD = 10V VGS=4.5V RG=10 Pulsed
Data Sheet
td(off) 100 tf
1
0.1
Ta=125C Ta=75C Ta=25C Ta=-25C
10
td(on)
0.01
SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage
GATE-SOURCE VOLTAGE : VGS[V] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage
DRAIN-CURRENT : ID [A] Fig.12 Switching Characteristics
5 GATE-SOURCE VOLTAGE : VGS [V]
1000
CAPACITANCE : C [pF]
4
Ta=25C f=1MHz VGS=0V Ciss
3
100 Coss Crss
2 Ta=25C VDD = 10V ID = 1.5A RG=10 Pulsed 0 0.5 1 1.5 2
1
0
10 0.01 0.1 1 10 100
TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Typical Capacitance vs. Drain-Source Voltage

100000 10000 REVERSE CURRENT : IR (A) Ta = 75 1000 100 10 Ta= - 25 1 0.1 0.01 0 5 10 15 20 25 REVERSE VOLTAGE : VR[V] Fig.1 Reverse Current vs. Reverse Voltage Ta = 25 pulsed FORWARD CURRENT : I F (A) 1 pulsed
0.1 Ta = 75 Ta = 25 0.01 Ta= - 25
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE : VF[V] Fig.2 Forward Current vs. Forward Voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
4/5
2009.12 - Rev.A
ES6U2
Measurement circuit
Pulse Width
ID VGS RL D.U.T. RG VDD VDS
Data Sheet
VGS VDS
50% 10% 10% 90% tr ton
90% 50%
10% 90% td(off) toff tf
td(on)
Fig.1-1 Switching Time Measurement Circuit
VG
ID VGS RL IG(Const.) RG D.U.T. VDD VDS
Fig.1-2 Switching Waveforms
Qg VGS Qgs Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
FIg.2-2 Gate Charge Waveform
Notice 1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature, and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway. This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding temperature, generating heat of MOSFET and the reverse current. 2. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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5/5
2009.12 - Rev.A
Notice
Notes
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